|Antenna material||LT GaAs|
|Antenna structure||Wrapped dipole|
|Dipole length||20 µm|
|Gap size||5 µm|
|Substrate size*||5.0 x 5.0 x 0.35 mm3|
|Laser wavelength||~800 nm|
|Optical power||<10 mW|
|Pulse duration||<100 fs|
|Repetition rate||100 MHz (80...250 MHz)|
|Electrical connection||structure on PCB|
|Bias voltage||recommended: ±35 V (max. ± 40 V)|
*The chip is mounted on a 40 mm x 40 mm PCB.
Caution: Maximum optical power 10 mW at 100 MHz laser repetition rate.
Please refer to the specified laser parameters and bias voltage. Improper use or experimental conditions are excluded from warranty.
TERA8-1 antenna structure:
The TERA8-1 is a single dipole structure based on low temperature (LT)-grown GaAs. The antenna can be used as emitter or as detector. The chip is mounted on a PCB, the structure is robust without boding wires.
We test each antenna structure and guarantee bandwidth up to 4 THz. It is a ready-to-use unit, comes mounted, connected and tested to serve your THz experiment.
For the TERA8-1 antenna we offer the optomechanical mount T8-H2. It includes hyper-hemispherical silicon lenses for focusing or collimation of the THz radiation with differential thread micropositioning screws for coarse and fine in-plane alignment, and the focusing optics for the NIR light with lateral micropositioning.
Electrical field as a function of time:
Corresponding spectrum of emitted THz radiation:
Test Conditions for Data Plots
- Optical source: fs fiber laser operating at 780 nm and 100 fs pulse width
- Data recorded with 20 μm dipole used on emitter and detector side
- Mechanical chopper with 1 kHz
- Lock-in detection with 30 ms integration time
- 10 mW of optical input power at emitter and detector side
- Up to 30 V bias for emitter